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For a common-source JFET amplifier with RD = 1 kΩ, RS = 560 Ω, VDD = 10 V, and transconductance gm = 4500 µS, what is the voltage gain if the source resistor is fully bypassed?

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Field Effect Transistors - FETelectrical-engineering-mcqs › field-effect-transistors-fet
Published
22 Dec 2018
Last updated
28 May 2026

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Explanation

Given the parameters, when the source resistor is completely bypassed, the voltage gain is approximately 450.

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Practice related questions from the same subject.

  1. 1.Which JFET configuration corresponds to the common base setup in a PNP transistor?
  2. 2.In a JFET, what does the term IDSS represent?
  3. 3.For a p-channel enhancement-mode MOSFET with a threshold voltage (V_GS(th)) of -2V, what is the drain current when the gate-to-source voltage (V_GS) is 0V?
  4. 4.A D-MOSFET has a gate-to-source voltage (VGS) of 0 V. Given that the datasheet lists IDSS as 20 mA and VGS(off) as -5 V, what is the expected drain current (ID)?
  5. 5.What happens to the JFET channel when it reaches the cut-off condition?
  6. 6.If a JFET datasheet specifies the cutoff gate-source voltage (VGS(off)) as -4 V, what is the value of the pinch-off voltage (Vp)?
  7. 7.In a JFET, the source terminal is analogous to which part of a vacuum tube?
  8. 8.In a JFET, the channel is located between which two terminals?
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